BC817-16 BC817-25 BC817-40 features z for general af applications z high collector current z high current gain z low collector-emitter saturation voltage z complementary types: bc807 (pnp) maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.5 a p c collector power dissipation 0.3 w tj junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = 10 a, i e =0 50 v collector-emitter breakdown voltage v ceo i c = 10ma, i b =0 45 v emitter-base breakdown voltage v ebo i e = 1 a, i c =0 5 v collector cut-off current i cbo v cb = 45 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 4v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 100ma 100 600 dc current gain h fe(2) v ce = 1v, i c = 500ma 40 collector-emitter saturation voltage v ce (sat) i c = 500ma, i b = 50ma 0.7 v base-emitter saturation voltage v be (sat) i c = 500ma, i b = 50ma 1.2 v base-emitter voltage v be v ce = 1 v, i c = 500ma 1.2 v collecter capactiance c ob v cb =10v ,f=1mhz 10 pf transition frequency f t v ce = 5 v, i c = 10ma f=100mhz 100 mhz classification of h fe (1) rank BC817-16 BC817-25 BC817-40 range 100-250 160-400 250-600 marking 6a 6b 6c so t -23 1. base 2. emitter 3. collector BC817 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics BC817 2 date:2011/05 www.htsemi.com semiconductor jinyu
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